• DocumentCode
    2149387
  • Title

    Single Event Characterization of a Family of Voltage Supervisors Designed in a 0.35-µm Triple-Well CMOS Technology

  • Author

    Kerwin, David B. ; Lotfi, Younes ; Zanchi, A. ; Merkel, Ken ; Wilson, Aswathy ; Hafer, C.

  • Author_Institution
    Aeroflex Colorado Springs, Colorado Springs, CO, USA
  • fYear
    2013
  • fDate
    8-12 July 2013
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    We present Single Event Latch-Up (SEL), Single Event Transient (SET), and Total Ionizing Dose (TID) data for a family of voltage supervisors fabricated in a 0.35-μm triple-well, mixed-signal CMOS process.
  • Keywords
    CMOS analogue integrated circuits; integrated circuit design; mixed analogue-digital integrated circuits; SEL; SET; TID data; mixed-signal CMOS process; single event characterization; single event latch-up; single event transient; size 0.35 mum; total ionizing dose data; triple-well CMOS technology; voltage supervisors; Monitoring; Radiation effects; Temperature measurement; Testing; Threshold voltage; Tin; Xenon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2013 IEEE
  • Conference_Location
    San Francisco, CA
  • ISSN
    2154-0519
  • Print_ISBN
    978-1-4799-1136-3
  • Type

    conf

  • DOI
    10.1109/REDW.2013.6658208
  • Filename
    6658208
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2149387