Title :
Single Event Effect and Total Ionizing Dose Results of Highly Scaled Flash Memories
Author :
Irom, Farokh ; Nguyen, Duc N. ; Allen, G.R.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
SEE measurements and TID response for 25-32 nm Micron Technology NAND flash memories are reported. Radiation results of SLC parts are compared with results from MLC and TLC parts. The TLC device showed a very poor response to TID at low dose levels.
Keywords :
NAND circuits; flash memories; radiation hardening (electronics); space vehicle electronics; MLC parts; SEE measurements; SLC parts; TID response; TLC device; highly scaled flash memory; low dose levels; micron technology NAND flash memories; single event effect; size 25 nm to 32 nm; total ionizing dose; Computer architecture; Flash memories; Microprocessors; Radiation effects; Single event upsets; Temperature measurement; Threshold voltage;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2013 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-1136-3
DOI :
10.1109/REDW.2013.6658209
