Micron-scale inkjet-assisted digital lithography for large-area flexible electronics

Large-area electronics require cost-effective yet precise patterning of electrodes. We demonstrate a simple electrode patterning technique capable of micron-scale gap formation, that allows the patterning of a larger variety of metals than the current portfolio of jettable metallic ink comprises and does not require a high-temperature sintering step. However, this method can produce large variations in gap size resulting in inconsistent and irreproducible transistor drain current. We propose that source-gated transistors (SGTs) are well suited to this technique, as they have a saturated drain current independent of source-drain separation, thus leading to improved current uniformity despite inconsistencies in gap size.