Title :
Ion implantation technology and system for beyond 45nm node devices
Author :
Tanjyo, Masayasu ; Nagayama, Tsutomu ; Hamamoto, Nariaki ; Umisedo, Sei ; Koga, Yuji ; Maehara, Noriaki ; Une, Hideyasu ; Nogami, Takashi ; Hino, Masayoshi ; Kobayashi, Tomoaki ; Fujita, Hideki ; Matsumoto, Takao ; Yoshimura, Yosuke ; Sakai, Shigeki ; Nag
Author_Institution :
Nissin Ion Equip. Co. Ltd., Kyoto, Japan
Abstract :
Beyond 45 nm node transistor device transition is reviewed and the compensation for Moor¿s scaling law, next generation transistor structure and material will be changed. Accordingly, the ion implanter should be changed for the suitable production efficiency and new functions. The Medium Current ion implanter energy range was changed for the total low cost performance. The Low Energy ion implanter is appeared for miniaturization of the semiconductor devices. It will be developed for novel requirements of the devices.
Keywords :
ion implantation; transistors; Moor´s scaling law; ion implantation technology; medium current ion implanter energy range; next generation transistor; node transistor device transition; size 45 nm; Cellular phones; Costs; Dielectric materials; Ion implantation; Marketing and sales; Production; Random access memory; Semiconductor devices; Semiconductor materials; Transistors;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734791
