Title :
Single Event Effects Sensitivity of 180 and 350 nm SiGe HBT Microcircuits
Author :
Koga, R. ; Paul, Chandrani ; Romeo, D. ; Petrosyan, Vahan ; George, Jinto
Author_Institution :
Aerosp. Corp., El Segundo, CA, USA
Abstract :
SEE sensitivity to heavy ions and protons is observed with 180 and 350 nm SiGe HBT microcircuits incorporating identical ADC converters. 180 nm devices show relatively reduced sensitivity at low LET values.
Keywords :
Ge-Si alloys; analogue-digital conversion; heterojunction bipolar transistors; ADC converters; LET values; SEE sensitivity; SiGe; SiGe HBT microcircuits; heavy ions; protons; single event effects sensitivity; size 180 nm; size 350 nm; Heterojunction bipolar transistors; Ion beams; Ions; Monitoring; Silicon germanium; Tin; Xenon;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2013 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-1136-3
DOI :
10.1109/REDW.2013.6658211
