• DocumentCode
    2149471
  • Title

    Single Event Effects Sensitivity of 180 and 350 nm SiGe HBT Microcircuits

  • Author

    Koga, R. ; Paul, Chandrani ; Romeo, D. ; Petrosyan, Vahan ; George, Jinto

  • Author_Institution
    Aerosp. Corp., El Segundo, CA, USA
  • fYear
    2013
  • fDate
    8-12 July 2013
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    SEE sensitivity to heavy ions and protons is observed with 180 and 350 nm SiGe HBT microcircuits incorporating identical ADC converters. 180 nm devices show relatively reduced sensitivity at low LET values.
  • Keywords
    Ge-Si alloys; analogue-digital conversion; heterojunction bipolar transistors; ADC converters; LET values; SEE sensitivity; SiGe; SiGe HBT microcircuits; heavy ions; protons; single event effects sensitivity; size 180 nm; size 350 nm; Heterojunction bipolar transistors; Ion beams; Ions; Monitoring; Silicon germanium; Tin; Xenon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2013 IEEE
  • Conference_Location
    San Francisco, CA
  • ISSN
    2154-0519
  • Print_ISBN
    978-1-4799-1136-3
  • Type

    conf

  • DOI
    10.1109/REDW.2013.6658211
  • Filename
    6658211
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2149471