Title :
Atomic oxygen effects on NiSi and Ni(Pt)Si: Novel oxidation mechanism
Author :
Manandhar, Sudha ; COpp, Brian ; Kelber, Jeffry
Author_Institution :
Dept. of Chem., Univ. of North Texas, Denton, TX, USA
Abstract :
XPS data demonstrate that exposure of NiSi or Ni(Pt)Si to atomic oxygen at 300 K results in the kinetically controlled formation of transition metal silicate-containing overlayers > 45 ¿ thick regardless of the type of substrate doping. The results indicate that plasma exposure poses significant problems for NiSi/Ni(Pt)Si processing and oxide removal prior to subsequent metallization.
Keywords :
X-ray photoelectron spectra; doping; metallisation; nickel alloys; oxidation; plasma materials processing; platinum alloys; silicon alloys; Ni(Pt)Si; XPS; atomic oxygen effects; kinetically controlled formation; metallization; oxidation mechanism; oxide removal; plasma exposure; substrate doping; temperature 300 K; transition metal silicate-containing overlayers; Atomic measurements; Doping; Metallization; Oxidation; Passivation; Plasma applications; Plasma devices; Plasma materials processing; Semiconductor films; Substrates;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734793
