Title :
Single Event Response of the Samsung 16G NAND Flash
Author :
Oldham, T.R. ; Wilcox, Edward P. ; Friendlich, Mark R.
Abstract :
This study was undertaken to identify and characterize the susceptibilities of the 16 Gbit NAND flash memories from Samsung to destructive and nondestructive single event effects (SEE).
Keywords :
NAND circuits; flash memories; nondestructive testing; radiation hardening (electronics); space vehicle electronics; Samsung NAND flash memories; destructive single event effect; nondestructive single event effect; single event response; storage capacity 16 Gbit; Error correction; Flash memories; NASA; Radiation effects; Testing; Transient analysis; Xenon;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2013 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-1136-3
DOI :
10.1109/REDW.2013.6658212
