Demonstration of GaInP/GaAs heterojunction bipolar transistors grown with reduced toxicity all-metalorganic precursors

GaInP/GaAs Heterojunction Bipolar Transistors (HBT´s) are a promising alternative to AlGaAs/GaAs devices and demonstrated encouraging DC and microwave performance. Both MOCVD and MOMBE have been used to grow HBT structures and typically AsH₃ and PH₃ hydrides are used for group V elements. However, the high toxicity and high pressure of such sources limit them from being used in a production environment due to health and safety reasons. As a result, metalorganic sources such as tertiarybutylphosphine (TBP) and tertiarybutylarsine (TBA) have been explored as alternatives. In this work, we performed a systematic study of the impact the source of group V element has on HBT performance and report the DC and microwave characteristics of GaInP/GaAs HBT´s grown in an environment of reduced toxicity using all-metalorganic precursors hire TBP, TBA, triethylgallium (TEG), trimethylgallium (TMG) and trimethylindium (TMI)