Title :
Metal ions drift in ultra-low K dielectrics
Author :
Ou, Y. ; Wang, P.-I. ; Lu, T.M.
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
Metal ions embedded in dielectric films may play an important role in the reliability of advanced interconnect systems. In this talk, we will discuss the generation and drift of different metal ions such as Cu, Ta, and Ti into the dielectric materials from gate electrodes under an external electric field at elevated temperatures. Some strategies to eliminate the generation of metal ions will also be presented.
Keywords :
annealing; capacitors; copper; electrodes; integrated circuit interconnections; integrated circuit reliability; low-k dielectric thin films; tantalum; titanium; Cu; Ta; Ti; annealing; bias temperature stress; dielectric films; dielectric material; electrode capacitors; flat-band voltage shifts; gate electrodes; metal ions drift; ultralow K dielectrics; Dielectric films; Dielectric materials; Electrodes; Inorganic materials; Leakage current; Metal-insulator structures; Stress; Temperature; Testing; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734798
