Title :
A miniaturized high-efficiency GaAs HBT power amplifier used in TD-SCDMA handset application
Author :
Xiaojun, Bi ; Haiying, Zhang ; Qinghua, Huang ; Liqiang, Chen ; Junjian, Yin
Author_Institution :
Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China
Abstract :
This paper is the first to report a monolithic HBT power amplifier for TD-SCDMA cellular phones which achieves a high efficiency and linearity. The two-stage MMIC integrates input and interstage matching circuits, and active bias circuits in a single chip with a chip size as small as 0.91×0.98 mm2. The amplifier obtains a power-added efficiency (PAE) of 43% (16%) and 28.5 dB (23.8 dB) of the gain at the high and low operation mode under the 3.4 V supply. In addition, the adjacent channel leakage power is below -39 dBc and -48 dBc at 1.6 MHz and 3.2 MHz offset respectively with QPSK modulation. The MMIC offers the potential both for low cost production due to small chip size, stable voltage supply, and high performance at the same time.
Keywords :
III-V semiconductors; MMIC power amplifiers; cellular radio; code division multiple access; gallium arsenide; heterojunction bipolar transistors; mobile handsets; quadrature phase shift keying; space division multiple access; time division multiple access; GaAs; QPSK modulation; TD-SCDMA cellular phones; active bias circuits; adjacent channel leakage power; frequency 1.6 MHz; frequency 3.2 MHz; interstage matching circuits; monolithic HBT power amplifier; power-added efficiency; two-stage MMIC; Cellular phones; Circuits; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Impedance matching; Linearity; MMICs; Telephone sets; Time division synchronous code division multiple access;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734801
