Attenuation compensation techniques in distributed SiGe HBT amplifiers using highly lossy thin film microstrip lines

Author

Schick, C. ; Feger, T. ; Soenmez, E. ; Schad, K.-B. ; Trasser, A. ; Schumacher, Hermann

Author_Institution

Dept. of Electron Devices & Circuits, Ulm Univ., Germany

fYear

2005

fDate

12-17 June 2005

Abstract

A compact 1.3 mm × 0.83 mm SiGe distributed wideband amplifier is presented. The design utilizes highly lossy thin film microstrip transmission line elements. Attenuation compensation methods for extending the amplifier´s bandwidth are discussed. Amplifier small-signal gain is 10.5 dB, upper 3 dB cut-off frequency is 41 GHz. Low group delay variations of 21 ps within the bandwidth qualify this amplifier for operation in a 40 Gbit/s fibre-optic communication system.

Keywords

Ge-Si alloys; bipolar MIMIC; compensation; distributed amplifiers; microstrip lines; optical fibre communication; thin films; wideband amplifiers; 0.83 mm; 1.3 mm; 10.5 dB; 21 ps; 41 GHz; SiGe; amplifier bandwidth; attenuation compensation; distributed HBT amplifiers; distributed wideband amplifier; fibre-optic communication system; group delay variations; heterojunction bipolar transistors; thin film circuit interconnections; thin film microstrip lines; Attenuation; Bandwidth; Broadband amplifiers; Distributed amplifiers; Germanium silicon alloys; Heterojunction bipolar transistors; Microstrip; Propagation losses; Silicon germanium; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2005 IEEE MTT-S International

ISSN

01490-645X

Print_ISBN

0-7803-8845-3

Type

conf

DOI

10.1109/MWSYM.2005.1516527

Filename

1516527