Title :
A negative differential resistance effect implemented with a single MOSFET from 375 k down to 80 k
Author :
Vega-Gonzalez, Victor ; Gutierrez-Dominguez, Edmundo ; Guarin, Fernando
Author_Institution :
Dept. of Electron., INAOE, Puebla, Mexico
Abstract :
We report the implementation of a negative resistance (NR) device with a single MOSFET. This effect is achieved by biasing a regular 28-nm n-type Metal-Oxide Field-Effect Transistor (nMOSFET) as a Bipolar Junction Transistor (BJT) with the gate left floating. The NR device has a controllable peak-to-valley current ratio (PVCR) that goes from about 1.7 up to a value of 5.5 when varying the temperature from 375 K down to 80 K. Experimental results at room temperature were compared to numerical simulations that confirm the combined action of a superficial MOS-like-driven bipolar effect with that of a volumetric bipolar action as well. This hypothesis was confirmed by the cryogenic results.
Keywords :
MOSFET; NR device; bipolar junction transistor; controllable peak-to-valley current ratio; n-type metal-oxide field-effect transistor; negative differential resistance effect; negative resistance device; single MOSFET; size 28 nm; superficial MOS-like-driven bipolar effect; temperature 375 K; temperature 80 K; volumetric bipolar action; Current measurement; Logic gates; MOSFET circuits; Substrates; Temperature measurement; Transistors; Tunneling;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European
Conference_Location :
Bucharest
DOI :
10.1109/ESSDERC.2013.6818885
