A negative differential resistance effect implemented with a single MOSFET from 375 k down to 80 k

Author

Vega-Gonzalez, Victor ; Gutierrez-Dominguez, Edmundo ; Guarin, Fernando

Author_Institution

Dept. of Electron., INAOE, Puebla, Mexico

fYear

2013

fDate

16-20 Sept. 2013

Firstpage

330

Lastpage

333

Abstract

We report the implementation of a negative resistance (NR) device with a single MOSFET. This effect is achieved by biasing a regular 28-nm n-type Metal-Oxide Field-Effect Transistor (nMOSFET) as a Bipolar Junction Transistor (BJT) with the gate left floating. The NR device has a controllable peak-to-valley current ratio (PVCR) that goes from about 1.7 up to a value of 5.5 when varying the temperature from 375 K down to 80 K. Experimental results at room temperature were compared to numerical simulations that confirm the combined action of a superficial MOS-like-driven bipolar effect with that of a volumetric bipolar action as well. This hypothesis was confirmed by the cryogenic results.

Keywords

MOSFET; NR device; bipolar junction transistor; controllable peak-to-valley current ratio; n-type metal-oxide field-effect transistor; negative differential resistance effect; negative resistance device; single MOSFET; size 28 nm; superficial MOS-like-driven bipolar effect; temperature 375 K; temperature 80 K; volumetric bipolar action; Current measurement; Logic gates; MOSFET circuits; Substrates; Temperature measurement; Transistors; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European

Conference_Location

Bucharest

Type

conf

DOI

10.1109/ESSDERC.2013.6818885

Filename

6818885