Title :
Systematic study of the effects of δ-p-doping on 1.3μm dot-in-well lasers
Author :
Alexander, R.R. ; Childs, D. ; Agarwal, H. ; Groom, K.M. ; Liu, H.Y. ; Hopkinson, M. ; Hogg, R.A. ; Badcock, T.J. ; Mowbray, D.J. ; Skolnick, M.S. ; Ishida, M. ; Yamamoto, T. ; Sugawara, M. ; Arakawa, Y.
Author_Institution :
Univ. of Sheffield, Sheffield
Abstract :
We systematically studied effects of increasing p-doping concentrations on quantum dot lasers and found: an increase in threshold current, gain and loss; gain profile narrowing; increasing infinite T0 temperature range; and higher k-factor limited bandwidth.
Keywords :
current density; optical losses; quantum dot lasers; semiconductor doping; δ-p-doping effects; dot-in-well lasers; gain profile narrowing; k-factor limited bandwidth; loss; p-doping concentrations; quantum dot lasers; threshold current; wavelength 1.3 μm; Bandwidth; Collaboration; Consumer electronics; Doping profiles; Laboratories; Laser theory; Quantum dot lasers; Temperature dependence; Temperature distribution; Threshold current;
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0930-3
Electronic_ISBN :
978-1-4244-0931-0
DOI :
10.1109/CLEOE-IQEC.2007.4385948
