Reduction of momentum and spin relaxation rate in strained thin silicon films

Author

Osintsev, Dmitri ; Sverdlov, Viktor ; Selberherr, Siegfried

Author_Institution

Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria

fYear

2013

fDate

16-20 Sept. 2013

Firstpage

334

Lastpage

337

Abstract

We investigate the surface roughness and phonon induced spin and momentum relaxation in ultra-scaled SOI MOSFETs. We show that the spin-flip hot spots characterized by strong spin relaxation can be efficiently removed by applying shear strain resulting in an increase of spin lifetime by orders of magnitude. In contrast, the momentum relaxation time in ultrathin films, which is mostly determined by surface roughness scattering can be only increased by a factor of two, in agreement with strain-induced mobility enhancement data.

Keywords

MOSFET; carrier mobility; elemental semiconductors; phonons; semiconductor thin films; shear strength; silicon; silicon-on-insulator; surface roughness; surface scattering; Si; momentum reduction; momentum relaxation; momentum relaxation time; phonon induced spin; shear strain; spin lifetime; spin-flip hot spots; strain-induced mobility enhancement data; strained thin silicon films; strong spin relaxation rate; surface roughness scattering; ultrascaled SOI MOSFET; Films; Phonons; Rough surfaces; Scattering; Silicon; Strain; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European

Conference_Location

Bucharest

Type

conf

DOI

10.1109/ESSDERC.2013.6818886

Filename

6818886