MOCVD growth parameter study of InP-based materials for high-performance HEMTs

Metal organic chemical vapor deposition (MOCVD) has been a very attractive technique for the epitaxial growth of III-V compound semiconductors for microwave and optoelectronic device applications due to its simplicity and flexibility. As in many other growth techniques, MOCVD requires the optimization of the growth conditions to obtain desirable material properties for specific applications. InAlAs/InGaAs HEMT´s have demonstrated excellent electrical characteristics using MBE grown structures and more recently MOCVD grown devices have also shown promising but not yet equivalent performance. It is therefore important to perform a systematic evaluation of the growth criteria determining the properties of InP-based HEMT´s grown by MOCVD. It is the purpose of this paper to address the issue of MOCVD growth criteria and to provide experimental validation for them by demonstrating state of the art device characteristics