Title :
3.43GHz power amplifier design for satellite communications
Author :
Jihua, Liu ; Zhiqun, Li ; Zhigong, Wang ; Jianjun, Shen
Author_Institution :
Inst. of RF-&OE-ICs, Southeast Univ., Nanjing, China
Abstract :
A 3.33 GHz-3.53 GHz power amplifier for satellite communications is designed by using JAZZ 0.35 ¿m SiGe BiCMOS process. This power amplifier works in class AB type with single-ended structure. With a supply voltage of 3.3 V, the power gain is 23 dB at its center operation frequency and it can transmit 29.98 dBm output power to a 50 ¿ load at 1 dB power compression point with 33.84% power added efficiency. The simulation results show that the input and output matching are well and it can work stably.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC power amplifiers; field effect MMIC; integrated circuit design; satellite communication; JAZZ BiCMOS process; SiGe; class AB type amplifier; frequency 3.33 GHz to 3.53 GHz; gain 23 dB; power amplifier design; resistance 50 ohm; satellite communication; single-ended structure; size 0.35 mum; voltage 3.3 V; BiCMOS integrated circuits; Frequency; Gain; Germanium silicon alloys; Impedance matching; Power amplifiers; Power generation; Satellite communication; Silicon germanium; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734808
