InGaP/GaAs HBT MIC power amplifier with power combining at C-band

Author

Chen, Yanhu ; Shen, Huajun ; Chen, Gaopeng ; Liu, Xinyu ; Yuan, Dongfeng ; Wang, Zuqiang

Author_Institution

Sch. of Inf. Sci. & Eng., Shan Dong Univ., Jinan, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1418

Lastpage

1420

Abstract

A HBT MIC power amplifier with power combining based on InGaP/GaAs HBT was developed and measured for the application of C-band. The amplifier consists of two 2Ã—480 Â¿m emitter area InGaP/GaAs HBT power transistors. Microstripe line parallel matching networks were used to divide and combine the power. A parallel RC stabilization network was used to suppress the self-oscillation. By biasing the amplifier at Vcc=9 V, Ic=240 mA, the maximum CW output power of 32.7 dBm (1.8 W) with a maximum power added efficiency (PAE) of 43% was achieved at 6.4 GHz.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power combiners; C-band; HBT MIC power amplifier; HBT power transistors; InGaP-GaAs; RC stabilization network; frequency 6.4 GHz; microstripe line parallel matching networks; power combining; self-oscillation; size 2 mum; size 480 mum; CMOS technology; Gallium arsenide; Heterojunction bipolar transistors; Microstrip; Microwave integrated circuits; Power amplifiers; Power generation; Power transistors; Radiofrequency amplifiers; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734811

Filename

4734811