Optical transitions in strained quantum wells of InxGa 1-xAsyP1-y with InGaAsP barriers

We extend the phenomenological deformation potential strain model previously applied to InGaAs wells with InP barriers to quaternary wells and barriers. The model allows for any quaternary composition in the well or barrier, with the strain of either sign applied to the wells or barriers, as needed for comparison with advanced device structures. The model is tested by calculating the confinement energies of light and heavy hole transitions in compressively strained wells of InGaAsP clad by lattice matched barriers of InGaAsP. The calculated energies are compared with measurements carried out on multiquantum-well laser structures with compressive lattice mismatch strain as high as Δa/a=0.75%. Excellent agreement is obtained between the extended model and the experiment