Title :
Optical transitions in strained quantum wells of InxGa 1-xAsyP1-y with InGaAsP barriers
Author :
Jiang, X.P. ; Thiagarajan, P. ; Patrizi, G.A. ; Robinson, G.Y. ; Temkin, H. ; Forouhar, S. ; Vandenberg, J.M. ; Coblentz, D. ; Logan, R.A.
Author_Institution :
Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
Abstract :
We extend the phenomenological deformation potential strain model previously applied to InGaAs wells with InP barriers to quaternary wells and barriers. The model allows for any quaternary composition in the well or barrier, with the strain of either sign applied to the wells or barriers, as needed for comparison with advanced device structures. The model is tested by calculating the confinement energies of light and heavy hole transitions in compressively strained wells of InGaAsP clad by lattice matched barriers of InGaAsP. The calculated energies are compared with measurements carried out on multiquantum-well laser structures with compressive lattice mismatch strain as high as Δa/a=0.75%. Excellent agreement is obtained between the extended model and the experiment
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; interface electron states; photoconductivity; semiconductor quantum wells; InxGa1-xAsyP1-y; InGaAsP; advanced device structures; compressive lattice mismatch strain; confinement energies; hole transitions; lattice matched barriers; multiquantum-well structures; optical transitions; phenomenological deformation potential strain model; quaternary composition; quaternary wells; strained quantum wells; Capacitive sensors; Deformable models; Energy measurement; Indium gallium arsenide; Indium phosphide; Laser modes; Laser transitions; Lattices; Strain measurement; Testing;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328270
