Title :
Gate oxide breakdown location effect on power amplifier and mixed-signal circuits
Author :
Yuan, J.S. ; Ma, J.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
Abstract :
Gate oxide breakdown location effect on the class AB power amplifier and mixed-signal sample-and-hold circuit have been studied. The soft breakdown has minor effect on the performance of power amplifier and sample-hold circuit, while the hard breakdown at the drain side reduces power efficiency of class AB power amplifier and degrades signal to noise ratio of sample-and-hold circuit significantly.
Keywords :
MOSFET; mixed analogue-digital integrated circuits; power amplifiers; sample and hold circuits; semiconductor device breakdown; MOSFET; class AB power amplifier performance; gate oxide breakdown location effect; mixed-signal sample-and-hold circuit; power efficiency; sample-and-hold circuit SNR; CMOS logic circuits; Degradation; Electric breakdown; Leakage current; MOSFETs; Operational amplifiers; Power amplifiers; Radiofrequency amplifiers; Stress; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734815
