Title :
Electron beam pumped semiconductor laser for particle beam diagnostics
Author :
Garkusha, O.V. ; Pishchulin, I.V. ; Solov´ev, N.G. ; Romashkin, O.V.
Author_Institution :
Moscow Eng. Phys. Inst., USSR
Abstract :
Some characteristics of a technique for accelerated particle beam monitoring are presented. This technique for beam current and pulse duration measurement is based on the electron beam pumped semiconductor laser (EBP-laser) principle of operation. Experimental investigations of a 300- mu m GaAs primary probe were carried out. Accelerated electron beam pulses with current range 50-500 A, pulse duration 5 mu s, and energy 200 keV were registered. The system sensitivity in this current range was 5*10/sup -3/ V/A.<>
Keywords :
particle beam diagnostics; semiconductor junction lasers; EBP-laser; accelerated particle beam monitoring; beam current; electron beam pumped semiconductor laser; particle beam diagnostics; pulse duration measurement; system sensitivity; Acceleration; Electron beams; Laser beams; Laser excitation; Monitoring; Particle beam measurements; Particle beams; Pulse measurements; Pump lasers; Semiconductor lasers;
Conference_Titel :
Particle Accelerator Conference, 1991. Accelerator Science and Technology., Conference Record of the 1991 IEEE
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0135-8
DOI :
10.1109/PAC.1991.164706
