High-performance III-V MOSFETs enabled by atomic layer deposition

ALD, as a state-of-the-art oxide formation technique, provides unprecedented opportunity to study various deposited oxides or insulators on III-V materials. The interface property of oxides or insulators on III-V compound semiconductors is a very complex problem. The underlying reasons for these above experimental observations mostly are not well-understood. To find an excellent dielectric and gate stack on III-V materials in general still remains a big challenge for material and device research community.