• DocumentCode
    2150166
  • Title

    The frequency limits of field-effect transistors: MOSFET vs. HEMT

  • Author

    Schwierz, Frank

  • Author_Institution
    Inst. of Micro- & Nanoelectron., Tech. Univ. Ilmenau, Ilmenau, Germany
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    1433
  • Lastpage
    1436
  • Abstract
    An overview on the current understanding of the frequency limits (in terms of the cutoff frequency fT) of FETs is provided. Main factors affecting fT in MOSFETs and HEMTs are discussed and the effects of material properties and FET design on fT are examined. In particular, the role of channel mobility, density of states, and of the design of the gate-channel barrier is discussed. We show that the MOSFET concept has some inherent advantages regarding the fT limits compared to HEMTs.
  • Keywords
    MOSFET; carrier mobility; high electron mobility transistors; MOSFET; channel mobility; cutoff frequency; field-effect transistors; frequency limits; gate-channel barrier; high electron mobility transistors; Cutoff frequency; FETs; Gallium arsenide; HEMTs; Indium phosphide; MOSFET circuits; Nanoelectronics; PHEMTs; Radio frequency; mHEMTs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734822
  • Filename
    4734822
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2150166