Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs MOS-MHEMT without gate recess

Author

Lee, Kuan-Wei ; Lin, Hsien-Chang ; Lee, Kai-Lin ; Wang, Yeong-Her

Author_Institution

Dept. of Electron. Eng., I-Shou Univ., Kaohsiung, Taiwan

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1437

Lastpage

1439

Abstract

Selective liquid phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the application of the InAlAs/InGaAs metal-oxide semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify one mask and grow reliable oxide films as well as sidewall passivation layers simultaneously. In comparison, the InAlAs/InGaAs MOS-MHEMT is a good candidate for high-power applications.

Keywords

III-V semiconductors; MOSFET; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; oxidation; InAlAs-InGaAs; MOS-MHEMT; metal-oxidesemiconductor metamorphic high-electron-mobility transistor; photoresists; selective liquid phase oxidation; sidewall passivation layers; Etching; Fabrication; Gallium arsenide; Gold; Indium compounds; Indium gallium arsenide; Oxidation; Resists; Voltage; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734823

Filename

4734823