Title :
Transient leakage current technique for MIS HEMT (Al2O3/AlGaN/GaN) dielectric semiconductor interface property characterization
Author :
Wen, Cheng P. ; Wang, Jinyan ; Chen, Hongwei ; Hao, Y.L. ; Lau, K.M. ; Tang, C.W.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
We report the successful assessment of both dielectric semiconductor interface, and transistor channel sheet charge densities through the device leakage current characteristics of a MIS GaN HEMT structure. The unconventional test vehicle and procedure described here provide ferroelectric hetero-junction device properties not obtainable using traditional characterization tools.
Keywords :
III-V semiconductors; MISFET; alumina; aluminium compounds; dielectric polarisation; ferroelectric semiconductors; gallium compounds; high electron mobility transistors; hole mobility; leakage currents; semiconductor device measurement; semiconductor heterojunctions; semiconductor-insulator boundaries; transients; two-dimensional electron gas; wide band gap semiconductors; Al2O3-AlGaN-GaN; I-V curve; MIS HEMT structure; MIS device; dielectric-semiconductor interface; ferroelectric semiconductor heterojunction device; polarization induced electron-hole charge pairs; semiconductor device measurement method; static potential; surface mobile hole; transient leakage current; transistor channel 2-DEG sheet charge density; Aluminum gallium nitride; Aluminum oxide; Charge carrier processes; Dielectric thin films; Electrodes; Gallium nitride; HEMTs; Leakage current; Optical polarization; Slabs;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734824
