• DocumentCode
    2150210
  • Title

    Electrolyte for EC-V profiling of InP and GaAs based heterostructures

  • Author

    Faur, M. ; Faur, M. ; Flood, D.J. ; Goradia, M. ; Wilt, D.M.

  • Author_Institution
    NASA Lewis Res. Center, Cleveland, OH, USA
  • fYear
    1994
  • fDate
    27-31 Mar 1994
  • Firstpage
    508
  • Lastpage
    511
  • Abstract
    A new electrolyte (UNIEL) based on NH3F2 and o-H3PO4 has been developed for EC-V net majority carrier concentration profiling of InP and GaAs based heterostructures. The new electrolyte was tested with good results on heterostructures containing p- and n-type InP, GaAs, InGaAs and InGaAsP layers
  • Keywords
    III-V semiconductors; carrier density; gallium arsenide; indium compounds; semiconductor junctions; semiconductor-electrolyte boundaries; GaAs; H3PO4; InGaAs; InGaAsP; InP; NH3F2; UNIEL; electrochemical capacitance voltage profiling; electrolyte; heterostructures; majority carrier concentration; n-type InP; o-H3PO4; p-type InP; Capacitance-voltage characteristics; Chemical analysis; Etching; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Inspection; Surface topography; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-1476-X
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1994.328280
  • Filename
    328280
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2150210