DocumentCode
2150217
Title
Semiconductor-gas discharge electronic devices: stability, patterns and control
Author
Astrov, Yu.A.
Author_Institution
A.F. Ioffe Phys. Tech. Inst., St. Petersburg, Russia
Volume
3
fYear
2003
fDate
20-22 Aug. 2003
Firstpage
883
Abstract
Recent results of studying the transport properties of planar semiconductor-gas discharge devices are reviewed. The device can operate in the stable mode or in regimes where self-organization of spatial and temporal patterns occurs. In the range of stability, it can be applied as a high speed converter of infrared images. Simple non-linear models of operation in both modes are presented. The equations corresponding to the converter regime are used to implement a control scheme that can essentially optimize the process of switching on of the state of discharge with increased current. Different scenarios of pattern formation are described and examples both of global and local control of patterns are presented. Some experimental data are accompanied by results of numerical study of the corresponding two-dimensional reaction-diffusion model.
Keywords
Townsend discharge; bifurcation; gas-discharge tubes; image convertors; pattern formation; spatiotemporal phenomena; Townsend discharge; bifurcation; global control; high speed converter; infrared images; local control; nonlinear models; pattern formation; planar device; self-organization; semiconductor-gas discharge electronic devices; spatial patterns; stable mode; switching; temporal patterns; two-dimensional reaction-diffusion model; Conductivity; Control systems; Discharges; Electrodes; Fault location; Gas discharge devices; Image converters; Physics; Stability; Switching converters;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics and Control, 2003. Proceedings. 2003 International Conference
Print_ISBN
0-7803-7939-X
Type
conf
DOI
10.1109/PHYCON.2003.1237019
Filename
1237019
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