Title :
A comparison of low-frequency noise characteristics of silicon homojunction and III-V heterojunction bipolar transistors
Author :
Kirtania, Ashish K. ; Das, Mukunda B. ; Chandrasekhar, S. ; Lunardi, L.M. ; Hamm, R.A. ; Yang, L.W.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
Abstract :
The low-frequency noise generators in silicon homojunction and III-V heterojunction bipolar transistors are examined and compared in terms of an equivalent input noise current generator in the common-emitter configuration. The 1/f noise component of this generator has been found to depend on the base current as IBγ where γ~1.8 for the Si BJT´s and InP/InGaAs HBT´s with high current gains (β~50), and γ~1.1 for the AlGaAs/GaAs HBT´s with low current gains (4<β<12). Besides the 1/f noise component there exists a variety of deep-level related g-r noise components in all transistors. The 1/f noise spectral density when presented versus the base current density has been found to be the lowest in the case of InP/InGaAs HBT´s
Keywords :
electric noise measurement; heterojunction bipolar transistors; random noise; semiconductor device noise; semiconductor device testing; 1/f noise component; III-V heterojunction bipolar transistors; InP-InGaAs; Si; base current density; common-emitter configuration; current gains; deep-level related g-r noise components; equivalent input noise current generator; homojunction bipolar transistors; low-frequency noise characteristics; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Low-frequency noise; Noise generators; Noise measurement; Silicon; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328287
