A low power SiGe HBT LNA utilizing serial inductance for wideband matching

Author

Huang, Lu ; Zhang, Wan-Rong ; Xie, Hong-Yun ; Li, Jia ; Zhang, Wei ; Wang, Yang ; Shen, Pei ; Gan, Jun-Ning ; Huang, Yi-Wen ; Hu, Ning

Author_Institution

Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1500

Lastpage

1503

Abstract

A UWB LNA (low noise amplifier) based on 0.35 Â¿m SiGe BiCMOS technology is presented in this paper. This LNA adopts a resistance feedback topology to optimize the gain and noise figure. The serial inductance at the base is used to matching input impedance and decreasing group delay variation. The simulation results indicate that the gain of LNA reaches 12.5 dB with the variation of 1.9 dB and the power consuming is 6.3 mW in full band from 3.1 GHz to 10.6 GHz. This SiGe UWB LNA exhibits less than 5 ps group delay variation and less than 3.85 dB NF over the entire band.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; bipolar MMIC; impedance matching; inductance; low noise amplifiers; low-power electronics; microwave amplifiers; ultra wideband technology; wideband amplifiers; BiCMOS technology; SiGe; UWB low noise amplifier; frequency 3.1 GHz to 10.6 GHz; gain 1.9 dB; gain 12.5 dB; group delay variation; low power HBT LNA; power 6.3 mW; resistance feedback topology; serial inductance; size 0.35 mum; wideband matching input impedance; BiCMOS integrated circuits; Broadband amplifiers; Delay; Feedback; Germanium silicon alloys; Heterojunction bipolar transistors; Inductance; Low-noise amplifiers; Silicon germanium; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734831

Filename

4734831