Title :
A tester for the contact resistivity of self-aligned silicides
Author :
Lynch, W.T. ; Ng, K.K.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
A novel tester is presented which utilizes MOSFET inversion channels to connect silicided source/drain electrically to satisfy the requirements of a Kelvin tester. This tester, basically two MOSFETs back to back, can be fabricated along with real devices and requires no additional processing steps. Two version of the Kelvin tester have been examined, the cross-bridge Kelvin resistor and the contact end resistor. The principles of these devices are explained, and some measurements are reported.<>
Keywords :
contact resistance; electric resistance measurement; metallisation; test equipment; MOSFET inversion channels; contact end resistor; contact resistivity; cross-bridge Kelvin resistor; self-aligned silicides; source/drain contacts; tester; Automatic testing; Circuit testing; Conductivity; Contacts; Kelvin; MOSFETs; Metallization; Monitoring; Resistors; Silicides;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32829
