DocumentCode :
2150469
Title :
A highly linear wideband CMOS LNA adopting current amplification and distortion cancellation
Author :
Xu, Rongwen ; Sun, Lingling ; Wen, Jincai
Author_Institution :
Key Lab. of RF Circuits & Syst., Hangzhou Dianzi Univ., Hangzhou, China
fYear :
2008
fDate :
20-23 Oct. 2008
Firstpage :
1512
Lastpage :
1515
Abstract :
This paper presents a highly linear wideband low-noise amplifier (LNA) adopting the current amplification and distortion cancellation, it exploits the noise cancellation for the low-noise, and employs a low second-order distortion PMOS/NMOS input pair and the current mirror amplifier in order to highly improve the linearity. The proposed CMOS LNA exhibits a power gain of 16.0 dB, an IIP3 of 9.5 dBm, and an average noise figure of 2.9 dB with 24.4 mW power consumption at a 1.8 V power supply. The LNA was designed in a 0.18-¿m RF CMOS process.
Keywords :
CMOS integrated circuits; current mirrors; low noise amplifiers; wideband amplifiers; RF CMOS process; current amplification; current mirror amplifier; distortion cancellation; highly linear wideband CMOS LNA; highly linear wideband low-noise amplifier; low second-order distortion PMOS-NMOS input pair; noise cancellation; Broadband amplifiers; Gain; Linearity; Low-noise amplifiers; MOS devices; Mirrors; Noise cancellation; Noise figure; Radiofrequency amplifiers; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
Type :
conf
DOI :
10.1109/ICSICT.2008.4734834
Filename :
4734834
Link To Document :
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