Title :
Improvement of InAlAs/InP heterointerface grown by MOVPE by using thin AlP layer
Author :
Imanishi, K. ; Kasai, K.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
InAlAs/InP selectively doped heterostructures have great potential for microwave and millimeter-wave power device applications. InAlAs/InP HEMTs have a higher breakdown voltage and lower output conductance than InAlAs/InGaAs HEMTs. Few studies have been reported on InAlAs/InP selectively doped heterostructures, however, because it is difficult to grow high-quality interfaces between the InAlAs and InP layers. Brasil et al. (1991, 1992) reported the interface characteristics of gas-source MBE-grown InAlAs/InP heterostructures using photoluminescence (PL) measurement. In this paper, we investigate the interface characteristics of InAlAs/InP heterostructures grown by reduced-pressure metal organic vapor phase epitaxy (MOVPE). We improved the 2DEG characteristics of InAlAs/InP heterostructures by inserting an AlP interfacial layer between InAlAs and InP
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor junctions; two-dimensional electron gas; vapour phase epitaxial growth; 2DEG; AlP interfacial layer; InAlAs-AlP-InP; InAlAs-InP; InAlAs/InP selectively doped heterostructures; MOVPE; interface characteristics; photoluminescence; Epitaxial growth; Epitaxial layers; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Microwave devices; Molecular beam epitaxial growth; Photoluminescence;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328297
