DocumentCode :
2150663
Title :
Intracavity frequency-doubled electrically-injected VECSEL
Author :
Esherick, P. ; Serkland, D.K. ; Geib, K.M. ; Peake, G.M. ; Crawford, M.H. ; Alford, W.J. ; Allerman, A.A.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
fYear :
2002
fDate :
2002
Abstract :
We have previously demonstrated an intra-cavity frequency doubled optically pumped vertical external cavity surface emitting laser (VECSEL) based on a top emitting epitaxial structure. In this paper we report on a similar device, an InGaAs MQW VECSEL that is electrically-injected and bottom emitting. The bottom emitting structure allows for better current spreading and more efficient heat extraction from the active region at the expense of increased intracavity absorption from the substrate region.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; optical harmonic generation; optical pumping; quantum well lasers; surface emitting lasers; InGaAs; MQW lasers; active region; bottom emitting; bottom emitting structure; current spreading; efficient heat extraction; electrically-injected; intracavity absorption; intracavity frequency-doubled; substrate region; vertical external cavity surface emitting laser; Frequency; Indium gallium arsenide; Laser excitation; Optical harmonic generation; Optical pumping; Pump lasers; Quantum well devices; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and
ISSN :
1099-4742
Print_ISBN :
0-7803-7378-2
Type :
conf
DOI :
10.1109/LEOSST.2002.1027597
Filename :
1027597
Link To Document :
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