Intracavity frequency-doubled electrically-injected VECSEL

Author

Esherick, P. ; Serkland, D.K. ; Geib, K.M. ; Peake, G.M. ; Crawford, M.H. ; Alford, W.J. ; Allerman, A.A.

Author_Institution

Sandia Nat. Lab., Albuquerque, NM, USA

fYear

2002

fDate

2002

Abstract

We have previously demonstrated an intra-cavity frequency doubled optically pumped vertical external cavity surface emitting laser (VECSEL) based on a top emitting epitaxial structure. In this paper we report on a similar device, an InGaAs MQW VECSEL that is electrically-injected and bottom emitting. The bottom emitting structure allows for better current spreading and more efficient heat extraction from the active region at the expense of increased intracavity absorption from the substrate region.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; optical harmonic generation; optical pumping; quantum well lasers; surface emitting lasers; InGaAs; MQW lasers; active region; bottom emitting; bottom emitting structure; current spreading; efficient heat extraction; electrically-injected; intracavity absorption; intracavity frequency-doubled; substrate region; vertical external cavity surface emitting laser; Frequency; Indium gallium arsenide; Laser excitation; Optical harmonic generation; Optical pumping; Pump lasers; Quantum well devices; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and

ISSN

1099-4742

Print_ISBN

0-7803-7378-2

Type

conf

DOI

10.1109/LEOSST.2002.1027597

Filename

1027597