Current status of crossed-field devices

Author

MacMaster, G.H.

Author_Institution

Raytheon Co., Waltham, MA, USA

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

358

Lastpage

361

Abstract

It is noted that the response to advanced system requirements has lead to technological advances in crossed-field development, exemplified by low-noise versions of crossed-field amplifiers and phase-locked magnetrons. Upgraded systems requirements are motivating a new generation of crossed-field devices characterized by clear improvements in noise reduction, signal coherence, bandwidth, mode purity, reliability and format factors. The following developments are considered: circuited cathode crossed-field amplifiers (CFAs) for low-noise operation; cathode-driven CFAs as linear accelerator drivers, a millimeter-wave axial-gain CFA; spaceborne power transmission systems; MBWO (M-type backward wave oscillator) advances; and secondary electron emitter materials.<>

Keywords

magnetrons; microwave amplifiers; microwave tubes; secondary electron emission; M-type backward wave oscillator; bandwidth; cathode-driven CFAs; circuited cathode crossed-field amplifiers; crossed-field amplifiers; crossed-field devices; format factors; linear accelerator drivers; millimeter-wave axial-gain CFA; mode purity; noise reduction; phase-locked magnetrons; reliability; secondary electron emitter materials; signal coherence; spaceborne power transmission systems; Bandwidth; Cathodes; Character generation; Circuits; Coherence; Low-noise amplifiers; Magnetrons; Noise reduction; Power system reliability; Signal generators;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32830

Filename

32830