Sapphire substrate-bonded ultra-low threshold 850 nm VCSEL array

Author

Liu, Jiang ; Riely, Brian ; Shen, Paul ; Das, Naresh ; Newman, Peter ; Chang, Wayne ; Simonis, George

Author_Institution

Sensors & Electron Devices Directorate, US Army Res. Lab., Adelphi, MD, USA

fYear

2002

fDate

2002

Abstract

Oxide-confined vertical-cavity surface-emitting laser (VCSEL) 8×8 arrays were fabricated and off set flip-chip bonded onto sapphire substrates. These devices were further wire bonded in pin-grid-array (PGA) packages as optical transmitters. Optical output of the top-emitting 850 nm VCSEL array was transmitted through the transparent sapphire substrate. Lasing threshold as low as 24 μA was found from some of these devices at room temperature.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; flip-chip devices; gallium arsenide; optical transmitters; quantum well lasers; sapphire; semiconductor device packaging; semiconductor laser arrays; substrates; 24 muA; 8×8 VCSEL arrays; 850 nm; Al₂O₃; GaAs; flip-chip bonded; lasing threshold; optical output; optical transmitters; oxide-confined vertical-cavity surface-emitting laser arrays; pin-grid-array packages; room temperature; sapphire substrate-bonded ultra-low threshold 850 nm VCSEL array; top emitting VCSEL array; transparent sapphire substrate; Artificial intelligence; Bonding; Contacts; Distributed Bragg reflectors; Optical arrays; Optical transmitters; Packaging; Sensor arrays; Substrates; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and

ISSN

1099-4742

Print_ISBN

0-7803-7378-2

Type

conf

DOI

10.1109/LEOSST.2002.1027598

Filename

1027598