Development of passive devices in 130 nm RFCMOS technology and PDK implementation for RF VCO designs

Author

Duo, Xinzhong ; Lee, Tinghuang ; Wen, Paul ; Kang, Lindsay ; Chen, Tweeg ; Zhu, Paul ; Yang, Li-wu

Author_Institution

Semicond. Manuf. Int. (Shanghai) Corp., Shanghai, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1468

Lastpage

1471

Abstract

This paper focuses on the design of RF component design such as MOSFETs, varactors, capacitors and inductors in SMIC 0.13 Â¿m RFCMOS technology. Modeling results of these passives devices and associated PDK are implemented in a 0.13 Â¿m RFCMOS VCO design. The RF building block has been fabricated from 130 nm CMOS technology and achieved a phase noise of -140.8 dBc/Hz@1 MHz at a current consumption of 14 mA.

Keywords

CMOS integrated circuits; integrated circuit design; integrated circuit manufacture; integrated circuit modelling; phase noise; process design; radiofrequency integrated circuits; radiofrequency oscillators; voltage-controlled oscillators; PDK implementation; RF VCO design; RFCMOS technology; SMIC; Semiconductor Manufacturing International Corporation; circuit design; current 14 mA; current consumption; frequency 1 MHz; passive devices; passives device modeling; phase noise; process design kit; size 130 nm; CMOS logic circuits; CMOS technology; Fingers; Inductors; MOSFETs; Q factor; Radio frequency; Semiconductor device noise; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734843

Filename

4734843