DocumentCode :
2150708
Title :
A wide-band RF front-end for multi-standard application
Author :
Ni, Mingchen ; Li, GuoLin ; Zhang, Chun ; Li, DongMei ; Wang, ZhiHua
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear :
2008
fDate :
20-23 Oct. 2008
Firstpage :
1472
Lastpage :
1474
Abstract :
A multi-standard transceiver requires a wide-band radio frequency front-end in order to process RF signals of any frequency included by all the standards concerned. A noise cancellation technology is utilized in the low noise amplifier (LNA) to cancel the noise introduced by the source resistance matching segment. An active balun is embedded in the input stage of the mixer, which connect the single-end output LNA with the double-balanced mixer. To reduce the flicker noise introduced by the switching transistors, a current injection technology is utilized in the mixer. The present front-end*, integrated in a 0.18 ¿m CMOS process, can cover the bands over 0.8~2.5 GHz and exhibits NF below 6 dB at intermediate frequency (IF) which is higher than 1 MHz. Since the present front-end has no inductor, it occupies only 0.35 mm2 on the chip. The total current consumption is 10 mA from a 1.8 V supply.
Keywords :
CMOS integrated circuits; UHF mixers; low noise amplifiers; transceivers; transistors; CMOS process; active balun; current 10 mA; current injection technology; double-balanced mixer; flicker noise; intermediate frequency; low noise amplifier; multistandard transceiver; noise cancellation technology; single-end output LNA; size 0.18 mum; source resistance matching segment; transistor switching; wide-band radio frequency front-end; 1f noise; Broadband amplifiers; CMOS technology; Impedance matching; Low-noise amplifiers; Noise cancellation; Radio frequency; Radiofrequency amplifiers; Transceivers; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
Type :
conf
DOI :
10.1109/ICSICT.2008.4734844
Filename :
4734844
Link To Document :
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