• DocumentCode
    2150708
  • Title

    A wide-band RF front-end for multi-standard application

  • Author

    Ni, Mingchen ; Li, GuoLin ; Zhang, Chun ; Li, DongMei ; Wang, ZhiHua

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing, China
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    1472
  • Lastpage
    1474
  • Abstract
    A multi-standard transceiver requires a wide-band radio frequency front-end in order to process RF signals of any frequency included by all the standards concerned. A noise cancellation technology is utilized in the low noise amplifier (LNA) to cancel the noise introduced by the source resistance matching segment. An active balun is embedded in the input stage of the mixer, which connect the single-end output LNA with the double-balanced mixer. To reduce the flicker noise introduced by the switching transistors, a current injection technology is utilized in the mixer. The present front-end*, integrated in a 0.18 ¿m CMOS process, can cover the bands over 0.8~2.5 GHz and exhibits NF below 6 dB at intermediate frequency (IF) which is higher than 1 MHz. Since the present front-end has no inductor, it occupies only 0.35 mm2 on the chip. The total current consumption is 10 mA from a 1.8 V supply.
  • Keywords
    CMOS integrated circuits; UHF mixers; low noise amplifiers; transceivers; transistors; CMOS process; active balun; current 10 mA; current injection technology; double-balanced mixer; flicker noise; intermediate frequency; low noise amplifier; multistandard transceiver; noise cancellation technology; single-end output LNA; size 0.18 mum; source resistance matching segment; transistor switching; wide-band radio frequency front-end; 1f noise; Broadband amplifiers; CMOS technology; Impedance matching; Low-noise amplifiers; Noise cancellation; Radio frequency; Radiofrequency amplifiers; Transceivers; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734844
  • Filename
    4734844