Title :
Interconnected lift-off VCSELs for microcavity device arrays
Author :
Raley, J.A. ; Lott, J.A. ; Nelson, T.R., Jr. ; Stintz, A. ; Malloy, K.J.
Author_Institution :
Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA
Abstract :
A schematic diagram of a lift-off VCSEL structure designed to emit at 980 nm is shown. All devices herein are grown by molecular beam epitaxy on [001]-oriented GaAs substrates. The VCSELs have a standard triple InGaAs/AlGaAs quantum well active region within a 1 λ-thick microcavity. The distributed Bragg reflectors (DBRs) are composed of GaAs and Al0.9Ga0.1As quarter-wave layers.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser transitions; microcavity lasers; molecular beam epitaxial growth; quantum well lasers; surface emitting lasers; 980 nm; Al0.9Ga0.1As; Al0.9Ga0.1As quarter-wave layers; InGaAs-AlGaAs; [001]-oriented GaAs substrates; distributed Bragg reflectors; interconnected lift-off VCSELs; lift-off VCSEL structure design; microcavity device arrays; molecular beam epitaxy; standard triple InGaAs/AlGaAs quantum well active region; Apertures; Bridge circuits; Distributed Bragg reflectors; Dry etching; Gallium arsenide; Microcavities; Optical device fabrication; Semiconductor laser arrays; Substrates; Vertical cavity surface emitting lasers;
Conference_Titel :
All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and
Print_ISBN :
0-7803-7378-2
DOI :
10.1109/LEOSST.2002.1027599
