Title :
Investigating the effect of chirality on coaxial Carbon Nanotube Field Effect Transistor
Author :
Sankar, P. A Gowri ; Kumar, K. Udhaya
Author_Institution :
Dept. of Electr. & Electron. Eng., Anna Univ., Chennai, India
Abstract :
Carbon Nanotube Field Effect Transistors (CNTFET) are promising nano-scaled devices for implementing high performance, very dense and low power circuits. The core of a CNTFET is a carbon nanotube. Its conductance property is determined by the chirality of the tube. In this paper, the current-voltage characteristics of coaxial type CNTFET is studied by quantum simulations using the non-equilibrium Green´s function formalism with the self-consistent born approximation. The simulation shows that the current-voltage characteristics of CNTFET vary depends on the chirality and thickness of the oxide layer. This analysis is applicable to primitive and complex digital and analog circuit design based on CNTFETs. The CNTFET simulation is carried out using Nanohub.org, which is an online based java platform engine.
Keywords :
Green´s function methods; carbon nanotube field effect transistors; chirality; circuit simulation; electric admittance; low-power electronics; nanoelectronics; CNTFET simulation; Nanohub.org; analog circuit design; chirality; coaxial carbon nanotube field effect transistor; coaxial type CNTFET; conductance property; current-voltage characteristics; digital circuit design; low power circuit; nanoscaled device; nonequilibrium Green´s function formalism; oxide layer thickness; quantum simulation; self-consistent born approximation; CNTFETs; Engines; Logic gates; MOSFET circuits; Silicon; Switches; CNTFET; CNTs; Chirality; Coaxial tube; I–V characteristics; On-Off ratio; SWNTs;
Conference_Titel :
Computing, Electronics and Electrical Technologies (ICCEET), 2012 International Conference on
Conference_Location :
Kumaracoil
Print_ISBN :
978-1-4673-0211-1
DOI :
10.1109/ICCEET.2012.6203767