Title :
A robust CMOS RF front-end design for 3.1–4.8GHz MB-OFDM UWB system
Author :
Yang, Guang ; Li, Wei ; Li, Ning ; Ren, Junyan
Author_Institution :
State Key Lab. of ASIC&Syst., Fudan Univ., Shanghai, China
Abstract :
This paper presents a robust RF front-end for 3.1-4.8-GHz direct-conversion Ultra-wideband (UWB) applications such as the MB-OFDM UWB. The circuits contain a gain controllable low-noise amplifier (LNA) with resistive feedback, a merged quadrature mixer with static current injection, and local oscillator (LO) buffers. Post-layout simulations show that the fully differential front-end achieves a maximum conversion gain of 25.5 dB and a minimum of 16.5 dB, an input return loss of better than -8 dB, a minimum noise figure of 4.5 dB in high-gain mode and an input referred 3rd intercept point (IIP3) of -4.3 dBm in low-gain mode while drawing 26.3 mA current from a 1.8-V supply without the buffers. The ESD protected chip is implemented in a 0.18-¿m CMOS technology with an active area of 0.48 mm2.
Keywords :
CMOS integrated circuits; electrostatic discharge; low noise amplifiers; microwave amplifiers; microwave frequency convertors; microwave mixers; oscillators; CMOS RF front-end design; ESD protected chip; MB-OFDM UWB; MB-OFDM UWB system; current 26.3 mA; direct-conversion ultrawideband applications; frequency 3.1 GHz to 4.8 GHz; gain controllable low-noise amplifier; high-gain mode; local oscillator buffers; low-gain mode; post-layout simulations; quadrature mixer; resistive feedback; size 0.18 mum; static current injection; voltage 1.8 V; CMOS technology; Circuit simulation; Feedback circuits; Gain; Local oscillators; Low-noise amplifiers; Noise figure; Radio frequency; Robustness; Ultra wideband technology;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734845
