Threshold Clamping in Quantum Dot lasers

Author

Spencer, P. ; Clarke, E. ; Howe, P. ; Murray, R.

Author_Institution

Imperial Coll. London, London

fYear

2007

fDate

17-22 June 2007

Firstpage

1

Lastpage

1

Abstract

The use of bilayer InAs/GaAs quantum dot (QD) material as the active region of a semiconductor laser diode allows wavelengths in excess of 1500 nm to be accessed. QDs localise carriers in three dimensions, leading to very different gain properties compared with quantum well and bulk material. Predicted improvements in the performance of QD laser devices include lower threshold current densities and reduced temperature sensitivity compared with conventional telecommunications InP-based quantum well (QW) long-wavelength lasers.

Keywords

III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum dot lasers; InAs-GaAs; QD laser device performance; lower threshold current densities; quantum dot lasers; semiconductor laser diode; temperature sensitivity; threshold clamping; Clamps; Diode lasers; Gallium arsenide; Optical materials; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Semiconductor materials; Temperature sensors; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-0931-0

Electronic_ISBN

978-1-4244-0931-0

Type

conf

DOI

10.1109/CLEOE-IQEC.2007.4385986

Filename

4385986