DocumentCode
2150802
Title
GaAs-based tunnel junctions for micro-cavity devices
Author
Möller, C. ; Böttcher, J. ; Protsch, M. ; Künzel, H.
Author_Institution
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
fYear
2002
fDate
2002
Abstract
The development of high quality GaAs-based tunnel junctions grown by MBE was systematically studied. Fabricated Si/Be-doped GaAs tunnel junctions show record low junction resistance. The enhancement of lateral current spreading is demonstrated.
Keywords
beryllium; gallium arsenide; light emitting diodes; micro-optics; microcavities; molecular beam epitaxial growth; silicon; tunnel diodes; GaAs-based tunnel junctions; GaAs:Si,Be; MBE growth; Si,Be-doped GaAs tunnel junctions; large-area top-side emitting LED structures; lateral current spreading enhancement; low junction resistance; micro-cavity devices; micro-cavity light sources; Apertures; Contacts; Distributed Bragg reflectors; Doping; Electric resistance; Electron mobility; Gallium arsenide; Light sources; Temperature; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and
ISSN
1099-4742
Print_ISBN
0-7803-7378-2
Type
conf
DOI
10.1109/LEOSST.2002.1027602
Filename
1027602
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