Title :
GaAs-based tunnel junctions for micro-cavity devices
Author :
Möller, C. ; Böttcher, J. ; Protsch, M. ; Künzel, H.
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
Abstract :
The development of high quality GaAs-based tunnel junctions grown by MBE was systematically studied. Fabricated Si/Be-doped GaAs tunnel junctions show record low junction resistance. The enhancement of lateral current spreading is demonstrated.
Keywords :
beryllium; gallium arsenide; light emitting diodes; micro-optics; microcavities; molecular beam epitaxial growth; silicon; tunnel diodes; GaAs-based tunnel junctions; GaAs:Si,Be; MBE growth; Si,Be-doped GaAs tunnel junctions; large-area top-side emitting LED structures; lateral current spreading enhancement; low junction resistance; micro-cavity devices; micro-cavity light sources; Apertures; Contacts; Distributed Bragg reflectors; Doping; Electric resistance; Electron mobility; Gallium arsenide; Light sources; Temperature; Tunneling;
Conference_Titel :
All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and
Print_ISBN :
0-7803-7378-2
DOI :
10.1109/LEOSST.2002.1027602
