• DocumentCode
    2150855
  • Title

    A 1.2V low power CMOS receiver for Bluetooth

  • Author

    Aboueldahab, Waleed F. ; Sharaf, Khaled M.

  • Author_Institution
    Dept. of Electr. Eng., Ain-Shams Univ., Cairo, Egypt
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    1577
  • Lastpage
    1580
  • Abstract
    A 1.2 V Bluetooth receiver was implemented in a 0.13 ¿m CMOS process. The receiver supports both the basic data rate at 1 Mb/s and the enhanced date rate (EDR) at 2 Mb/s and 3 Mb/s Bluetooth modes. The presented receiver is highly integrated with only 13 mA current consumption at 1.2 V supply. At this low power consumption, the receiver achieves a NF less than 15 dB and IIP3 of -20.8 dBm. The receiver provides a maximum voltage gain of 95 dB and 86 dB for the basic date rate and the enhanced date rate modes respectively.
  • Keywords
    Bluetooth; CMOS integrated circuits; low-power electronics; receivers; Bluetooth receiver; CMOS process; bit rate 1 Mbit/s; bit rate 2 Mbit/s; bit rate 3 Mbit/s; current 13 mA; enhanced date rate; gain 86 dB; gain 95 dB; size 0.13 mum; voltage 1.2 V; Bluetooth; CMOS process; CMOS technology; Circuits; Demodulation; Energy consumption; Filters; Radio frequency; Radiofrequency amplifiers; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734849
  • Filename
    4734849