DocumentCode :
2150855
Title :
A 1.2V low power CMOS receiver for Bluetooth
Author :
Aboueldahab, Waleed F. ; Sharaf, Khaled M.
Author_Institution :
Dept. of Electr. Eng., Ain-Shams Univ., Cairo, Egypt
fYear :
2008
fDate :
20-23 Oct. 2008
Firstpage :
1577
Lastpage :
1580
Abstract :
A 1.2 V Bluetooth receiver was implemented in a 0.13 ¿m CMOS process. The receiver supports both the basic data rate at 1 Mb/s and the enhanced date rate (EDR) at 2 Mb/s and 3 Mb/s Bluetooth modes. The presented receiver is highly integrated with only 13 mA current consumption at 1.2 V supply. At this low power consumption, the receiver achieves a NF less than 15 dB and IIP3 of -20.8 dBm. The receiver provides a maximum voltage gain of 95 dB and 86 dB for the basic date rate and the enhanced date rate modes respectively.
Keywords :
Bluetooth; CMOS integrated circuits; low-power electronics; receivers; Bluetooth receiver; CMOS process; bit rate 1 Mbit/s; bit rate 2 Mbit/s; bit rate 3 Mbit/s; current 13 mA; enhanced date rate; gain 86 dB; gain 95 dB; size 0.13 mum; voltage 1.2 V; Bluetooth; CMOS process; CMOS technology; Circuits; Demodulation; Energy consumption; Filters; Radio frequency; Radiofrequency amplifiers; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
Type :
conf
DOI :
10.1109/ICSICT.2008.4734849
Filename :
4734849
Link To Document :
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