InP islands on GaAs substrates: MOCVD growth of quantum-sized structures

Author

Reaves, C.M. ; Bressler-Hill, V. ; Krishnamurthy, M. ; Varma, S. ; Petroff, P.M. ; Weinberg, W.H. ; DenBaars, S.P.

Author_Institution

Center for Quantized Electron. Structures, California Univ., Santa Barbara, CA, USA

fYear

1994

fDate

27-31 Mar 1994

Firstpage

611

Lastpage

614

Abstract

The growth of InP on InGaP/GaAs(001) by metalorganic chemical vapor deposition (MOCVD) has been studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), and photoluminescence (PL). Islands with irregular dimensions on the growth surface but with uniform height are observed at low coverages. With increasing coverages, uniform coherent islands are observed with a dramatic increase in height. An appreciable density of large dislocated islands become evident at still higher coverages. Photoluminescence from these structures is discussed

Keywords

III-V semiconductors; atomic force microscopy; gallium arsenide; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor growth; semiconductor quantum dots; substrates; transmission electron microscope examination of materials; vapour phase epitaxial growth; (001) substrate; AFM; GaAs; GaAs substrates; InP islands; InP-InGaP-GaAs; MOCVD growth; TEM; atomic force microscopy; photoluminescence; quantum-sized structures; transmission electron microscopy; uniform height; Atomic force microscopy; Epitaxial growth; Gallium arsenide; Indium phosphide; MOCVD; Maximum likelihood estimation; Photoluminescence; Substrates; Surface morphology; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328306

Filename

328306