DocumentCode
2150888
Title
Simulations and measurements of the dynamic performance of 850 nm VCSELs with GaAs and InGaAs quantum well active regions
Author
Von Würtemberg, R. Marcks ; Aggerstam, T. ; Runnström, C. ; Chitica, N. ; Malmquist, J.
Author_Institution
Opt. Syst. Div., Zarlink Semicond. AB, Jarfalla, Sweden
fYear
2002
fDate
2002
Abstract
The carrier density - gain relationship in the active region has a significant impact on the dynamic performance of a VCSEL. This impact is investigated both theoretically and experimentally on different 850 nm VCSELs.
Keywords
III-V semiconductors; carrier density; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; semiconductor device models; surface emitting lasers; 850 nm; 850 nm VCSELs; GaAs; GaAs quantum well active regions; InGaAs; InGaAs quantum well active regions; carrier density-gain relationship; dynamic performance; quantum well lasers; Charge carrier density; Gallium arsenide; Heating; Indium gallium arsenide; Optical design; Optical devices; Optical filters; Optical losses; Optical receivers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and
ISSN
1099-4742
Print_ISBN
0-7803-7378-2
Type
conf
DOI
10.1109/LEOSST.2002.1027606
Filename
1027606
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