Title :
GaInNAs quantum well VCSELs
Author :
Steinle, G. ; Ramakrishnan, A. ; Supper, D. ; Kristen, G. ; Pfeiffer, J. ; Riechert, H. ; Geelhaar, L. ; Degen, Ch. ; Ebbinghaus, G. ; Wolf, H.D.
Author_Institution :
COM FO D VCSEL/CPR Photonics, Infineon Technol. Corp., Munich, Germany
Abstract :
Summary form only given. We have succeeded to produce high performance VCSELs emitting at 1300nm with bitrates up to 10 Gbit/s and output-powers above 1 mW with both approaches. Our long-wavelength devices comprise intracavity contacts in order to reduce absorption losses due to doped layers. We present different devices and discuss the impact of design and growth methods.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; laser transitions; molecular beam epitaxial growth; optical transmitters; quantum well lasers; surface emitting lasers; 1 mW; 10 Gbit/s; 1300 nm; GaInNAs; GaInNAs quantum well VCSELs; MOCVD; QW lasers; absorption losses; doped layers; growth methods; high performance VCSELs; intracavity contacts; long-wavelength devices; solid source MBE; Absorption; Diode lasers; Indium phosphide; MOCVD; Mirrors; Nitrogen; Photonics; Power generation; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and
Print_ISBN :
0-7803-7378-2
DOI :
10.1109/LEOSST.2002.1027608
