GaInNAs quantum well VCSELs

Author

Steinle, G. ; Ramakrishnan, A. ; Supper, D. ; Kristen, G. ; Pfeiffer, J. ; Riechert, H. ; Geelhaar, L. ; Degen, Ch. ; Ebbinghaus, G. ; Wolf, H.D.

Author_Institution

COM FO D VCSEL/CPR Photonics, Infineon Technol. Corp., Munich, Germany

fYear

2002

fDate

2002

Abstract

Summary form only given. We have succeeded to produce high performance VCSELs emitting at 1300nm with bitrates up to 10 Gbit/s and output-powers above 1 mW with both approaches. Our long-wavelength devices comprise intracavity contacts in order to reduce absorption losses due to doped layers. We present different devices and discuss the impact of design and growth methods.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; laser transitions; molecular beam epitaxial growth; optical transmitters; quantum well lasers; surface emitting lasers; 1 mW; 10 Gbit/s; 1300 nm; GaInNAs; GaInNAs quantum well VCSELs; MOCVD; QW lasers; absorption losses; doped layers; growth methods; high performance VCSELs; intracavity contacts; long-wavelength devices; solid source MBE; Absorption; Diode lasers; Indium phosphide; MOCVD; Mirrors; Nitrogen; Photonics; Power generation; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and

ISSN

1099-4742

Print_ISBN

0-7803-7378-2

Type

conf

DOI

10.1109/LEOSST.2002.1027608

Filename

1027608