Title :
1.3 micron InGaAsN oxide-confined VCSELs grown by MOCVD
Author :
Murray, Christoper S. ; Newman, Frederick D. ; Sun, Shangzhu ; Clevenger, J. Bridget ; Bossert, David J. ; Wang, Charlie X. ; Hou, Hong Q. ; Stall, Rick
Abstract :
Summary form only given. An Emcore D 180 metalorganic chemical vapor deposition (MOCVD) system was used to develop 1.3 micron InGaAsN/GaAs vertical cavity surface emitting lasers (VCSELs). The InGaAsN VCSELs are dry etched to form a 42 micron mesa that is subsequently wet oxidized to form apertures ranging from 6.0 to 8.5 microns. The quasi-single mode laser was modulated with a pseudorandom bit sequence at 2.5 Gbit/sec at room temperature.
Keywords :
III-V semiconductors; MOCVD; etching; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser modes; laser transitions; optical transmitters; quantum well lasers; surface emitting lasers; 1.3 micron; 2.5 Gbit/s; 42 micron; 6.0 to 8.5 micron; Emcore D 180; InGaAsN; InGaAsN oxide-confined VCSELs; MOCVD growth; dry etched; electro optical modulation; pseudorandom bit sequence; quasi-single mode laser; room temperature; vertical cavity surface emitting lasers; wet oxidized; Apertures; Chemical lasers; Chemical vapor deposition; Dry etching; Gallium arsenide; Laser modes; MOCVD; Surface emitting lasers; Vertical cavity surface emitting lasers; Wet etching;
Conference_Titel :
All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and
Print_ISBN :
0-7803-7378-2
DOI :
10.1109/LEOSST.2002.1027610
