Title :
Power module control design
Author :
Valentine, Richard J.
Author_Institution :
Semicond. Products Sector, Motorola Inc., Austin, TX, USA
Abstract :
The control and interface circuits for power transistor modules that are used in 50 to 100 kW motor drives are difficult to design because of the 400 to 600A currents, 400V operating levels, and fast switching times. Each of the power module control design functions is examined, as well as futuristic semiconductor devices that will simplify the control circuit. These functions include: logic-to-power module interface, DC-DC gate bias power supply, IGBT gate driver, overcurrent protection, temperature sensing, undervoltage shutdown, and fault output interface. The module control functions are usually located on an external printed circuit board. Recent progression in power IGBT modules have improved the ease of interfacing to the power module by locating the control circuit board in the module. These “smart” modules, while easier to use, cost more and place pre-defined limits on circuit flexibility. An alternative modular approach is shown
Keywords :
DC-DC power convertors; bipolar transistor switches; driver circuits; insulated gate bipolar transistors; machine control; motor drives; power bipolar transistors; power integrated circuits; power semiconductor switches; switching circuits; 400 V; 400 to 600 A; 50 to 100 kW; DC-DC gate bias power supply; circuit flexibility; fault output interface; gate driver; logic-to-power module interface; motor drives; overcurrent protection; power IGBT modules; power module control design; smart power; switching times; temperature sensing; undervoltage shutdown; Control design; Flexible printed circuits; Insulated gate bipolar transistors; Motor drives; Multichip modules; Power semiconductor switches; Power supplies; Power transistors; Semiconductor devices; Switching circuits;
Conference_Titel :
Industry Applications Conference, 1995. Thirtieth IAS Annual Meeting, IAS '95., Conference Record of the 1995 IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-3008-0
DOI :
10.1109/IAS.1995.530394
