Title :
Growth of InP on patterned substrates using AP-MOVPE
Author :
Lee, B.T. ; Logan, R.A.
Author_Institution :
Chonnam Nat. Univ., Kwangju, South Korea
Abstract :
Metalorganic vapor phase epitaxy (MOVPE) growth of InP and related materials on the patterned substrates has been studied in many recent investigations to understand how the growth sequences are modified by the presence of the patterns, which is essential information to establish the fabrication process of a wide variety of new optoelectronic devices. In this work, details of the growth patterns around etched grooves and mesas on InP substrates are reported during the atmospheric pressure (AP) MOVPE of InP layers. Parameters studied include trichloroethane (TCA) addition to the H2 carrier, groove/mesa orientation ([110] vs. [11¯0]), and the shape V-like and rectangular). Emphasis was placed on the planarization of the grown layers as well as the growth evolution within the grooves since these are the most important aspects of device application
Keywords :
III-V semiconductors; indium compounds; semiconductor growth; substrates; vapour phase epitaxial growth; AP-MOVPE; H2; H2 carrier; InP; MOVPE growth; TCA addition; atmospheric pressure MOVPE; etched grooves; etched mesas; fabrication process; groove orientation; growth patterns; mesa orientation; metalorganic vapor phase epitaxy; optoelectronic devices; patterned substrates; planarization; trichloroethane; Epitaxial growth; Epitaxial layers; Etching; Indium phosphide; Inorganic materials; Optical device fabrication; Optoelectronic devices; Planarization; Shape; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328315
