Title :
23 GHz fully integrated CMOS synthesizer
Author :
Mazouffre, O. ; Deval, Y. ; Goumballa, B. ; Belot, D. ; Begueret, B.
Author_Institution :
IMS Lab., Univ. of Bordeaux 1, Bordeaux, France
Abstract :
A fully integrated 23 GHz CMOS PLL-based synthesizer is presented. This circuit combines push-push oscillator with a latch based divider to achieve low-power dissipation and a small die. The circuit was designed in 130 nm bulk CMOS process from STMicroelectronics. The synthesized range is from 22 GHz up to 24.2 GHz, the power dissipation is 58 mW under 1.0 V power supply. The measured phase noise is better than -95 dBc/Hz at 1 MHz of the carrier with a 575 MHz reference frequency.
Keywords :
CMOS integrated circuits; frequency dividers; microwave oscillators; phase locked loops; voltage-controlled oscillators; STMicroelectronics; frequency 1 MHz; frequency 22 GHz to 24.2 GHz; frequency 575 MHz; fully-integrated CMOS PLL-based synthesizer; latch-based divider; low-power dissipation; noise figure -95 dB; phase noise; power 58 mW; power supply; push-push oscillator; voltage 1.0 V; CMOS process; Frequency measurement; Integrated circuit synthesis; Latches; Noise measurement; Oscillators; Phase measurement; Power dissipation; Power supplies; Synthesizers;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734858
