DocumentCode
2151121
Title
Red high-temperature AlGaInP-VCSEL
Author
Eichfelder, M. ; Roobach, R. ; Jetter, M. ; Schweizer, H. ; Michler, P.
Author_Institution
Univ. Stuttgart, Stuttgart
fYear
2007
fDate
17-22 June 2007
Firstpage
1
Lastpage
1
Abstract
Pulsed high-temperature measurements of Zn/C-doped VCSEL with lasing action at temperatures of more than +170degC were achieved. Several VCSEL with different kinds of doping alternatives in relation to their life-time were also investigated.
Keywords
III-V semiconductors; aluminium compounds; carbon; doping profiles; gallium compounds; high-speed optical techniques; indium compounds; laser cavity resonators; surface emitting lasers; zinc; AlGaInP:C; AlGaInP:Zn; doping alternatives; lasing action; life-time; pulsed high-temperature measurements; red high-temperature VCSEL; Distributed Bragg reflectors; Doping; Heating; Optical fibers; Pulse measurements; Semiconductor laser arrays; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location
Munich
Print_ISBN
978-1-4244-0931-0
Electronic_ISBN
978-1-4244-0931-0
Type
conf
DOI
10.1109/CLEOE-IQEC.2007.4386002
Filename
4386002
Link To Document